Antiferroelectric Phase Evolution in HfxZr1-xO₂ Thin Film Toward High Endurance of Non-Volatile Memory Devices

In this study, we experimentally and theoretically demonstrated a universal pathway of hysteresis evolution in polarization switching cycling in both antiferroelectric (AFE) and ferroelectric (FE) Hf xZr <tex-math notation="LaTeX">₁₋ₓO\,\,_2 </tex-math> (HZO) thin films. AFE films can achieve sufficient remnant polarization and high endurance by engineering the evolution process of double hysteresis merge. Based on this, we propose a new strategy for realizing high-endurance AFE films in non-volatile memory devices. Additionally, a record high endurance >10 12 on 6 nm AFE HZO under full polarization switching conditions at 4.5 MV/cm and 1 MHz is achieved to demonstrate the potential of this strategy.