This randomized trial examines the effects of Ge doping on magnetic properties in Fe3GaTe2, suggesting new manipulation strategies.
Recently, van der Waals magnetic materials have garnered extensive research attention. Among them, Fe 3 GaTe 2 possesses strong magnetic anisotropy and a Curie temperature (T C ) above room temperature, exhibiting great application potential in spintronics. Furthermore, Fe 3 GaTe 2 shows good responsiveness to elemental doping. However, doping at Fe atomic sites with magnetic metal atoms, while modifying T C of Fe 3 GaTe 2, disrupts its intrinsic ferromagnetic coupling interactions. This leads the doped Fe 3 GaTe 2 to exhibit properties such as antiferromagnetism, which is unfavorable for the exploitation of its intrinsic ferromagnetism. Under such circumstances, we noticed the similar structures and ferromagnetism between Fe 3 GaTe 2 and Fe 3 GeTe 2 and, thus, adopted Ge doping at Ga atomic sites. Compared with magnetic atom doping, this approach can effectively manipulate the ferromagnetism and T C of Fe 3 GaTe 2 while minimizing the disruption to its intrinsic ferromagnetism. Our work enriches the options for manipulating the magnetism of Fe 3 GaTe 2 via doping and opens up new directions for the magnetic manipulation of Fe 3 GaTe 2 .
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Chen et al. (2026) studied this question.
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