The feasibility of using dual bias metal oxide semiconductor field effect transistor (MOSFET) detectors with the new hemispherical brass buildup cap for in vivo dose measurements in prostate intensity‐modulated radiotherapy (IMRT) treatments was investigated and achieved. In this work, MOSFET detectors with brass buildup caps placed on the patient's skin surface on the central axis of the individual IMRT beams are used to determine the maximum entrance dose from the prostate IMRT fields. A general formalism with various correction factors taken into account to predict entrance dose for the IMRT fields with MOSFETs was developed and compared against predicted dose from the treatment‐planning system (TPS). We achieved an overall accuracy of better than on all measured fields for both 6‐MV and 10‐MV beams when compared to predicted doses from the Philips Pinnacle 3 and CMS XiO TPSs, respectively. We also estimate the total uncertainty in estimation of MOSFET dose in the high‐sensitivity mode for IMRT therapy to be 4.6%. PACS numbers: 87.53Xd, 87.56Fc
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Varadhan et al. (2006) studied this question.
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