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A detailed investigation of different methods for determining electron trap parameters has been made on crystals of CdS-CdSe. The principal techniques involved are decay of photoconductivity and thermally stimulated conductivity (TSC). Direct evidence of a quasicontinuous trap distribution with total density of 5×1015 cm−3, trap depth range of 0.1–0.7 eV, and capture cross sections of the order of 10−16 cm2 is obtained, for which correct values of the parameters can be calculated from Fermi-level analysis of either decay or TSC data. In the same crystals a discrete trap level with density of 2×1014 cm−3, depth of 0.73 eV, and apparent cross section of 10−14 cm2 is also found. In spite of the large value of cross section derived from the freeing of trapped electrons, these traps exactly obey monomolecular kinetics. A temperature threshold at 180°K is found, below which it is not possible to fill these traps. Examination of a number of possibilities favors the proposal that these traps are characterized by a Coulomb-repulsive barrier.
Bube et al. (Sat,) studied this question.