Recent progress of nitride materials for nonvolatile memory and neuromorphic applications

Resistive random-access memory (RRAM) has been widely explored with different resistive switching (RS) materials including oxides and nitrides, aiming for high-density and low-cost nonvolatile memory (NVM) solutions. This review focuses on the advancements in nitride-based RS materials for RRAM devices. The unique properties of nitride materials, including their reduced initial forming voltage and low dielectric strength, make them a promising choice for RRAM development. Nitride-based RRAM also addresses critical challenges, such as optimizing RS materials, reducing operating currents, enhancing thermal stability, and improving device reliability. These attributes position nitride-based RRAM as a strong contender for next-generation NVM technologies. Additionally, the potential of nitride materials in neuromorphic applications is explored, highlighting their ability to replicate synaptic behavior and enable energy-efficient computing architectures. Recent progress, challenges, and future directions in nitride-based materials are reviewed to provide valuable insights into their optimization and scalability. This study serves as a foundation for advancing electronic materials research, offering a pathway for the development of high-performance memory and neuromorphic systems involving nitride-based materials.