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August 19, 2025Transactions on Computer Science and Intelligent Systems ResearchOpen Access

Research and Application of Compute-in-Memory Architectures: RRAM, MRAM, and FeRAM

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RRAM, MRAM, and FeRAM show potential for high-speed data processing and lower power consumption, addressing the needs of modern applications.
RRAM features multilevel storage achieving over 7 bits per cell, while MRAM boasts endurance exceeding 1 trillion write cycles.
Comparative analysis reveals FeRAM's excellent reliability with access times around 50-100ns enables robust performance in embedded systems.
The study points to future developments in non-volatile memory technologies as critical for enhancing information processing systems.

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Implication

This review highlights performance characteristics of RRAM and MRAM in non-volatile memory, suggesting integration within edge computing applications.

Cite This Study

Yichang Chen (2025) studied this question.

synapsesocial.com/papers/68af55ccad7bf08b1eadc28e https://doi.org/10.62051/e68jey36

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Implication

This review highlights performance characteristics of RRAM and MRAM in non-volatile memory, suggesting integration within edge computing applications.

Research and Application of Compute-in-Memory Architectures: RRAM, MRAM, and FeRAM

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Implication

Cite This Study

Research and Application of Compute-in-Memory Architectures: RRAM, MRAM, and FeRAM

Key Points

Discussion

Implication

Cite This Study

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