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December 13, 2025ChemPlusChem

Recent Advances in Inorganic Oxide‐Based Resistive Random Access Memory: Challenges and Strategies for Practical Applications

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The aim is to summarize recent advances in inorganic oxide-based resistive random access memory and its applications.
Reviewed developments in resistive random-access memory (RRAM) devices.
Compared oxide-based RRAM with conventional memory technologies.
Discussed challenges and future prospects in the field.
Showed that RRAM offers fast switching speed and low power consumption.
Highlighted the potential of RRAM in neuromorphic computing.
Described the role of memristors and filamentary switching mechanisms.

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This review highlights improvements in scalable nonvolatile memory technologies, revealing their potential in neuromorphic computing.

Pritam et al. (2025) studied this question.

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