Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Christopher Paul Muzzillo; Craig L. Perkins; Sachit Grover; Andriy Zakutayev

doi:10.1039/d6tc00099a

January 1, 2026Journal of Materials Chemistry COpen Access

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

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Key Points

This research investigates the p-type doping capabilities of nitrogen in zinc selenide telluride films.
Sputtering technique was used for film deposition.
Polycrystalline samples were synthesized at varying compositions of ZnSe and Te.
Doping concentrations and hole mobility were analyzed.
Nitrogen doping resulted in substantial improvement in hole concentration.
Films exhibited p-type conductivity with enhanced performance properties.
Achieved hole concentrations exceeding acceptable thresholds for semiconductor applications.

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Implication

Examines p-type conductivity in nitrogen-doped zinc selenide telluride films, suggesting potential for semiconductor applications.

Abstract

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1-x ) is of interest because it is one of the widest-gap II-VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter...

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Muzzillo et al. (2026) studied this question.

synapsesocial.com/papers/6a338d50630953a74978e507 https://doi.org/10.1039/d6tc00099a

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Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Key Points

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Implication

Abstract

Discussion

Cite This Study

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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