Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique

Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA−ND) increased to 1.5×1018 cm−3 using single δ doping of N and Te (N+Te), while it was limited to 8×1017 cm−3 by δ doping of N alone. A promising approach was developed in which three consecutive δ-doped layers of N+Te were deposited for each δ-doping cycle. An enhancement in the (NA−ND) level to 6×1018 cm−3 has been achieved in ZnSe using this technique. The resultant layer has an average ZnTe content of only about 3%. This doping method shows potential for obtaining highly p-type doped ohmic contact layers without introducing significant lattice mismatch to ZnSe. Low-temperature photoluminescence spectra reveal some Te-related emissions.