Structural, dielectric, and radiation shielding properties of erbium doped phosphate glasses

Novel phosphate glasses augmented with different amounts of the erbium (Er 2 O 3 ) oxide were created in this work using the melt-quench process. The amorphous nature was verified by X-ray diffraction (XRD) investigation. The density for the resultant glass sample is increased when P 2 O 5 is substituted with Er 2 O 3 . The structure of current glasses was investigated using Fourier transform infrared (FTIR) spectroscopy. Increased local ordering and the creation of Er-linked cross-bridges (Er–O–P interactions), which lower NBO concentration, are two structural changes brought about by Er 2 O 3 doping up to 0.5 mol%. The dielectric properties were assessed throughout a wide frequency spectrum. Two distinct parts show the frequency dependence of the dielectric constant, ε′: a falling portion during small frequencies and a plateau portion over large frequencies. It is clear that (ε′) declines at 0.25 as well as 0.5 mol% Er 2 O 3 and continuously increases at higher concentrations. Additionally, (σ ac ) exhibits a similar trend, declining at Er 2 O 3 values of 0.25 and 0.5 mol% and gradually increasing at higher concentrations. The computability of glass through cross linked at low Er doping is the main reason for reduction in ε′, and σ ac . The Er-0.5 specimen with a minimum (ε′) and ac conductivity is the ideal option for packing material because to its maximal propagation velocity. Phy-X/PSD software was used to calculate the mean free path (G MFP ), equivalent atomic number (G Zeq ), and fast neutron removal cross-sections (G FNRCS ). Furthermore, build up factors (G BF ) were calculated for photon energies from 0.015 to 15 MeV and penetration depths from 0.5 to 40 mfp by using the G-P fitting technique. Er-1.0 sample has provided greater gamma-ray shielding than other samples, according to the results. Additionally, these findings highlight the potential of these glasses for radiation shielding in medical and industrial applications.