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This research aims to optimize the performance of a CCGSe semiconductor photodetector.

June 19, 2026Results in MaterialsOpen Access

Conceptual exploration and performance evaluation of an eminently sensitive CCGSe photodetector with a compatible back surface layer

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Randomized trial evaluates photodetector performance using CCGSe, suggesting enhanced sensitivity with BSF layer integration.

This research aims to optimize the performance of a CCGSe semiconductor photodetector.
Developed a device structure featuring n-CdS, p-Cu2CdGeSe4, and p+-WSe2 layers.
Systematically modified the thickness, doping concentration, and defect density of the layers.
Examined effects of series and shunt resistance, along with operating temperature.
Without BSF layer: V_OC=0.50 V, J_SC=35.93 mA/cm^2, R=0.53 A/W, D*=2.65×10^12 Jones.
With BSF layer: V_OC=0.67 V, J_SC=42.86 mA/cm^2, R=0.76 A/W, D*=8.29×10^13 Jones at 1030 nm.

Islam et al. (2026) studied this question.

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June 19, 2026Results in MaterialsOpen Access

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Authors

Randomized trial evaluates photodetector performance using CCGSe, suggesting enhanced sensitivity with BSF layer integration.

This research aims to optimize the performance of a CCGSe semiconductor photodetector.
Developed a device structure featuring n-CdS, p-Cu2CdGeSe4, and p+-WSe2 layers.
Systematically modified the thickness, doping concentration, and defect density of the layers.
Examined effects of series and shunt resistance, along with operating temperature.
Without BSF layer: V_OC=0.50 V, J_SC=35.93 mA/cm^2, R=0.53 A/W, D*=2.65×10^12 Jones.
With BSF layer: V_OC=0.67 V, J_SC=42.86 mA/cm^2, R=0.76 A/W, D*=8.29×10^13 Jones at 1030 nm.

Islam et al. (2026) studied this question.

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