N-Type Metal Oxide Semiconductor Hydrogen Sensors: Mechanisms, Materials Design, and Interface Engineering Strategies

Hydrogen is a promising clean-energy carrier, but its low ignition energy, high diffusivity, and wide flammability range demand reliable leak detection. Chemiresistive sensors based on n-type metal oxide semiconductors are attractive owing to their simple architecture, low cost, large resistance modulation, thermal robustness, and compatibility with miniaturized devices. This review focuses on n-type metal oxide semiconductor nanomaterials for hydrogen sensing, particularly ZnO, SnO2, In2O3, WO3, TiO2, and related mixed oxides. The fundamental sensing mechanisms are examined, including oxygen chemisorption, electron-depletion-layer modulation, grain-boundary barrier control, catalytic hydrogen spillover, and hydrogen-induced surface reduction or metallization, together with the way these mechanisms compete and cooperate under different operating conditions. Recent performance-enhancement strategies are organized around morphology and porosity control, noble-metal sensitization, defect and dopant engineering, n–n heterojunctions, molecular sieving, and low-temperature activation. Density functional theory is discussed as a design tool for evaluating adsorption energetics, vacancy formation, work-function shifts, band alignment, and interfacial charge transfer, along with its current limitations for modeling humid surfaces. Finally, key challenges and future directions, including humidity tolerance, standardized reporting, device integration, and emerging materials, are summarized to guide the development of high-performance hydrogen sensors.