This project focuses on the deposition of high-quality Zinc Oxide (ZnO) thin films on silicon and quartz substrates using the Atomic Layer Deposition (ALD) technique. ALD is a vapor-phase thin-film deposition method that enables precise control of film thickness, excellent uniformity, and conformal coating at the atomic scale. The objective of the work was to investigate the growth behavior and material properties of ZnO thin films deposited under controlled process conditions. The deposited films were characterized using various advanced material characterization techniques to evaluate their structural, surface, and optical properties.
bo Ryu (Wed,) studied this question.