Randomized trial evaluates single event effects and on-orbit reliability in aerospace, suggesting improved safety for future electronics.
BackgroundRadiation-induced failures in space environments pose a significant threat to aerospace electronics, necessitating high-fidelity single event effect (SEE) characterization data for next-generation systems.PurposeThis study aims to evaluate the single event effect sensitivity and on-orbit reliability of an advanced multi-core processor System-on-Chip (SoC) designed for aerospace applications.MethodsBased on the QJ 10005A―2018 standard, heavy ion irradiation testing was conducted using four types of heavy ion, i.e., C, F, Al, and Ta, across various Linear Energy Transfer (LET) levels, hence corresponding test SEE dataset including single event latch-up (SEL), single event upset (SEU) and single event functional interrupt (SEFI) characterization data was obtained and constructed. Finally, Geostationary Earth Orbit (GEO) on-orbit error rates were predicted by integrating experimental cross-section data with Weibull fitting and the Integral Rectangular Parallelepiped (IRPP) model.ResultsThe dataset indicates that the device's SEL threshold is no less than 86.5 MeV∙cm ²∙mg ⁻¹. The calculated on-orbit SEU error rates for multi-level Cache Memory (CACHE) and Random Access Memory (RAM) are 3.12×10 ⁻¹² bit ⁻¹∙d ⁻¹ and 7.7×10 ⁻¹⁰ bit ⁻¹∙d ⁻¹, respectively. Additionally, SEFI error rates for both the processor core and typical applications surpass the required specification limits.ConclusionsThe presented dataset in this study fills a critical gap in radiation characterization for aerospace processors, providing an essential foundation for radiation-hardened design, ground-based simulation, and on-orbit risk assessment.
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Qin et al. (2026) studied this question.
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