UV-Induced Interfacial Passivation via a Diacrylate Monomer for Stable Perovskite Solar Cells

Effective passivation of the buried interface is essential for achieving high performance and operational stability in perovskite solar cells (PSCs), as interfacial defects at the SnO 2 /perovskite interface induce non-radiative recombination and limit device efficiency. Here, a photopolymerizable diacrylate-based interfacial modifier, 1,4-bis[4-(6-acryloyloxyhexyloxy)benzoyloxy]-2-methylbenzene (RM82), is introduced to engineer the buried interface via UV-induced crosslinking. The resulting crosslinked layer reduces interfacial defect density and promotes perovskite crystallization, thereby suppressing recombination losses and facilitating charge extraction. Consequently, PSCs incorporating the RM82-modified interface achieve power conversion efficiencies (PCEs) exceeding 24% and exhibit enhanced environmental stability, retaining over 90% of their initial efficiency after storage under ambient conditions without encapsulation. This work demonstrates an effective interfacial passivation strategy for simultaneously improving the efficiency and stability of PSCs.