Investigates interfacial reactions during ALD of TiO2 on different electrodes, suggesting potential enhancements for DRAM capacitors.
This study investigates electrode-dependent interfacial reactions during ozone-based atomic layer deposition (ALD) of rutile TiO 2 thin films on Ru- and RuO 2 -based bottom electrodes for dynamic random-access memory (DRAM) capacitors. By...
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Song et al. (2026) studied this question.
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