Cycloalkyl Ligand-Engineered Zirconium–Oxo Clusters for Sub-9 nm Electron Beam Lithography with Ultralow Line Edge Roughness

M Q Zhang; Weiwei Li; Zihan Lian; Z Chen; D Wang; Xiaofeng Gong; J Z Zhao; Huie Zhu; Pengzhong Chen; Xiaojun Peng

doi:10.1021/jacs.6c03438

June 18, 2026Journal of the American Chemical Society

Cycloalkyl Ligand-Engineered Zirconium–Oxo Clusters for Sub-9 nm Electron Beam Lithography with Ultralow Line Edge Roughness

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Key Points

The research aims to establish zirconium-oxo clusters as a promising platform for high-resolution electron beam lithography.
Engineered cycloalkyl ligands were used with zirconium-oxo clusters.
Patterning capabilities were assessed for electron beam lithography.
Achieved sub-9 nm patterning resolution.
Demonstrated ultralow line edge roughness, enhancing precision in nanolithography.

Implication

Demonstrates low line edge roughness in electron beam lithography, indicating potential for advanced nanolithography.

Abstract

. The high-resolution, low-LER patterning capability achieved herein establishes these clusters as a promising platform for next-generation nanolithography and offers a viable strategy for designing high-Z metal-oxo cluster photoresists.

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Cite This Study

Zhang et al. (2026) studied this question.

synapsesocial.com/papers/6a377f3a24f042ddf4c59e1f https://doi.org/10.1021/jacs.6c03438

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Cycloalkyl Ligand-Engineered Zirconium–Oxo Clusters for Sub-9 nm Electron Beam Lithography with Ultralow Line Edge Roughness

Key Points

Implication

Abstract

Discussion

Cite This Study

Cycloalkyl Ligand-Engineered Zirconium–Oxo Clusters for Sub-9 nm Electron Beam Lithography with Ultralow Line Edge Roughness

Key Points

Implication

Abstract

Discussion

Cite This Study

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