Abstract Despite the ultra-high theoretical capacity of silicon (Si) anodes, their practical application is severely hindered by drastic volume effect and an unstable solid-electrolyte interphase (SEI). Atomic/molecular layer deposition (ALD/MLD) technology exhibits unique advantages in mitigating these challenges by constructing a stable and functionalized interface on Si anodes. This review summarizes recent advances and presents perspectives on ALD/MLD for Si anode interface engineering. Firstly, the existing interfacial challenges are analyzed: mechanical failure and structural degradation, complex/unstable SEI, and insufficient interfacial charge transfer. Subsequently, the key role and mechanism of ALD/MLD in enhancing the performance of Si anodes are elucidated from an atomic/molecular-scale interface engineering perspective. Crucially, three key aspects are emphasized: enhancing structural stability through mechanical confinement and stress dissipation, inducing the formation of stable SEI via ingenious interface chemical design, and constructing efficient ion/electron transport channels to optimize interfacial charge transfer kinetics. Finally, future research directions on ALD/MLD for Si anode interface engineering are proposed.
Wen et al. (Mon,) studied this question.