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Field-effect transistors (FETs) based on poly 2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene (MEH-PPV) were prepared with bottom-contact type interdigital electrodes of Cr/Au and Al/Au on the SiO2/Si substrates. MEH-PPV exhibited a p-type semiconducting behavior and orange light emission was observed when the devices were operated in vacuum. It was found that the luminescence efficiency of the FETs with Al/Au electrodes was higher than that of Cr/Au electrodes. The simultaneous injection of holes and electrons into MEH-PPV occurred efficiently with the application of Al/Au heteroelectrodes.
Sakanoue et al. (Mon,) studied this question.
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