Design of LNA for GPR Application Using TSMC 130 nm CMOS Technology

This paper presents the design, simulation, and performance evaluation of a Low Noise Amplifier (LNA) for Ground Penetrating Radar (GPR) applications using TSMC 130 nm CMOS technology[1]. The proposed LNA is designed to operate in the GHz frequency range while achieving high gain, low noise figure, proper impedance matching, and reliable stability[10]. Traditional CMOS LNA architectures face challenges due to bulky on-chip inductors, limited quality factors, and area constraints[7]. This work explores a multi-stage cascaded common-source topology with inductive input matching to enhance RF performance. Key parameters such as gain (S21), transient behavior, stability, and signal integrity are analyzed. Simulation results demonstrate a peak gain of 17.71 dB with effective signal amplification and low distortion, making the design suitable for GPR and other RF receiver front-end systems. The study also examines technology scaling effects and discusses future trends in compact, high-performance LNA architectures[16].