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July 2, 2026Gazi University Journal of Science Part A Engineering and Innovation0 citations

Optical Properties of AlGaN/GaN HEMT Structures

ABAhmet Kürşat BılgılıGazi Hastanesi YBYunus BaşGazi Hastanesi OSOrkun SarıarslanGazi Hastanesi

Key Points

The central aim is to determine the optical properties, layer thicknesses, and band gap energies of AlGaN/GaN HEMT structures.
AlGaN/GaN HEMT structures were grown using metal-organic chemical vapor deposition (MOCVD).
The Swanepoel envelope method calculated refractive index, layer thickness, absorption coefficient, and extinction coefficient.
The Tauc method and Kubelka–Munk method were utilized to determine the optical band gap energy.
Refractive index and absorption coefficients were determined across the transparent and absorption regions.
Layer thicknesses of buffer layers were accurately measured using the Swanepoel method.
The optical band gap energy of the AlGaN layer was characterized, affirming its semiconductor properties.

Abstract

This study investigated the optical properties of AlGaN/GaN/sapphire high-electron-mobility transistor (HEMT) structures. The AlGaN/GaN/sapphire HEMT structures were grown by metal-organic chemical vapour deposition (MOCVD). The aim of this study was to determine the optical properties, layer thicknesses, and band gap energies of the buffer layers. The Swanepoel envelope method was employed to calculate the refractive index, layer thickness, absorption coefficient, and extinction coefficient. These parameters were obtained for the transparent region as well as the weak- and medium-absorption regions. The Tauc method, together with the Kubelka–Munk method, was used to determine the optical band gap energy of the AlGaN layer.

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