Demonstrates high-density logic-in-memory devices in integrated circuits, suggesting efficient performance.
cycles. We further integrate these devices into reconfigurable inverter circuits that dynamically switch between NOR and NAND logic functions with tunable voltage transfer characteristics. The ferroelectric thin-film transfer process is fully compatible with silicon back-end-of-line thermal budgets and scalable to wafer-level integration, offering a viable route toward high-density, multifunctional logic-in-memory architectures.
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Huang et al. (2026) studied this question.
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