Demonstrates resistive switching behavior in heterostructures, indicating potential for nonvolatile memory applications.
In this paper, the resistive switching behavior controlled by the white-light irradiation was studied in ZnO/NiO/Carbon heterostructures. The current-voltage (I-V) hysteresis loops clearly demonstrate a pronounced bipolar resistance switching behavior in the heterostructures. The resistance switching effect can be modulated by light irradiation, which can be explained by the trap/detrap mechanism of charges. This study can help explore multi-functional materials and applications in feature nonvolatile memory devices.
No takes yet. Share an insight, caveat, or question.
Wang et al. (2026) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: