What question did this study set out to answer?

The study aims to investigate the coexistence and operation of resistive and ferroelectric switching in hafnium-zirconium oxide thin films.

February 11, 2026Open Access

Ferroelectric and resistive switching in epitaxial Hf₀. ₅Zr₀. ₅O₂

View Full Paper

Ask AI

Bookmark

Authors

JKJudith Rebecca Knabe

Discussion

Member takes

Implication

This thesis investigates resistive and ferroelectric switching in a hafnium-zirconium oxide system, highlighting new possibilities for memory technologies.

Key Points

The study aims to investigate the coexistence and operation of resistive and ferroelectric switching in hafnium-zirconium oxide thin films.
Used epitaxial Hf0.5Zr0.5O2 thin films grown on La0.8Sr0.2MnO3-buffered SrTiO3.
Characterized switching mechanisms using x-ray photoemission electron microscopy and hard x-ray photoelectron spectroscopy.
Conducted AC bias tests to observe polarization hysteresis and quasi-static voltage sweeps for resistive cycling.
Demonstrated robust ferroelectricity and filamentary resistive switching in the same device.
Showed that both switching modes can operate independently under different electrical conditions.
Identified localized filament formation related to oxygen vacancy mobility and characterized electro-chemical changes across the HZO layer.

Cite This Study

Judith Rebecca Knabe (2025) studied this question.

synapsesocial.com/papers/698c1bcd267fb587c655db9d https://doi.org/10.18154/rwth-2025-10956

View Full Paper

Ask AI

Bookmark

Implication

This thesis investigates resistive and ferroelectric switching in a hafnium-zirconium oxide system, highlighting new possibilities for memory technologies.

Ferroelectric and resistive switching in epitaxial Hf₀. ₅Zr₀. ₅O₂

Discussion

Member takes

Implication

Key Points

Cite This Study

Ferroelectric and resistive switching in epitaxial Hf₀. ₅Zr₀. ₅O₂

Discussion

Member takes

Implication

Key Points

Cite This Study

Also Consider

Also Consider