August 5, 2025ACS NanoOpen Access

Oxygen Vacancy Dynamics in Different Switching Modes of Hf0.5Zr0.5O2−δ

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Authors

JKJ. KnabeLund University KGKalle GoßForschungszentrum Jülich YLYen‐Po LiuForschungszentrum Jülich

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Implication

Operando analysis uncovers oxygen role in resistive switching and ferroelectric states in HfO2, suggesting interface engineering is crucial for device performance.

Key Points

Resistive switching in HfO2 allows for nonvolatile information storage through oxygen vacancy dynamics.
Operando spectroscopic analysis reveals a conductive filament's formation tied to oxygen migration in HfZrO2.
Ferroelectric switching shows polarization-dependent shifts indicating critical oxygen vacancy movement.
Interface engineering at the HZO/LSMO junction enhances ferroelectric performance, impacting overall device reliability.

Cite This Study

Knabe et al. (2025) studied this question.

synapsesocial.com/papers/6895220c9f4f1c896c4297bc https://doi.org/10.1021/acsnano.5c07038

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Implication

Operando analysis uncovers oxygen role in resistive switching and ferroelectric states in HfO2, suggesting interface engineering is crucial for device performance.

Oxygen Vacancy Dynamics in Different Switching Modes of Hf0.5Zr0.5O2−δ

Discussion

Member takes

Implication

Key Points

Cite This Study

Oxygen Vacancy Dynamics in Different Switching Modes of Hf0.5Zr0.5O2−δ

Discussion

Member takes

Implication

Key Points

Cite This Study

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