Polarization-State-Dependent Charge Screening in Metal–Ferroelectric–Metal Memcapacitors Enabled by an IGZO Oxygen Reservoir Layer

asymmetry. Systematic variation of stack configuration and IGZO thickness demonstrates that a bottom-interfaced, thickness-optimized IGZO layer maximizes both asymmetry and CMW. In addition, the IGZO layer functions as an oxygen reservoir, suppressing oxygen-vacancy-induced degradation and improving endurance. The device further exhibits stable analog synaptic characteristics, and a retention-aware state pruning strategy is introduced to mitigate retention-induced degradation, preserving read margin and improving computational accuracy under noise-aware conditions. These results establish IGZO-integrated MFM memcapacitors as a viable platform for high-performance ferroelectric capacitive memory and neuromorphic systems.