Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes

Optical-field profiles in wide-band-gap AlxGa1−xN/InxGa1−xN multiple-quantum well (MQW) separate-confinement heterostructure (SCH) laser diodes (LDs) were calculated using a 2×2 transfer-matrix approach that accommodates complex refractive indices. The refractive indices of AlxGa1−xN and InxGa1−xN were approximated by shifting the refractive index of GaN according to the band-gap energy of the solid solution. Current LDs were analyzed and show reasonable optical confinement. Optimization of the SCH waveguide for a three MQW active region was performed by varying the waveguide and cladding layer thicknesses. For 0.8μm thick Al0.10Ga0.90N cladding layers, waveguides on sapphire and SiC substrates had a maximum confinement factor of ∼3.3%. Layers outside of the waveguide strongly affected the optical field for thin (∼0.4 μm) cladding layer thicknesses and resulted in resonant coupling of the light out of the waveguide. Sapphire substrates were found to enhance light confinement, while SiC substrates were found to reduce optical confinement as the cladding layer thickness is reduced.