) showed superior performance with higher barrier height (0.68 eV), lower ideality factor (3.20), and higher rectification ratio (RR = 1702). Moreover, the increasing photocurrent under reverse bias with illumination confirmed that ZnPc acts as an efficient photoactive material. Overall, the results demonstrate that the ZnPc derivative, owing to its favorable electronic structure, strong ICT behavior, and enhanced charge transport properties, is a promising candidate for photodiode and optoelectronic applications.
Kazancıçok et al. (Fri,) studied this question.