High temperature photoconductivity of 2D layers of MoS 2

We report on the photoconductive properties of thin layers of MoS₂ flakes (with layer thicknesses ranging between 25--50 nm) beyond room temperatures. Photoconductivity measurements at multiple temperatures, between 290 and 425 K were performed using a laser source of λ = 640 nm. The variation of photocurrent with temperature at effective laser intensities, Peff (0.1 W<Peff< 0.8 W) as well as the variation of fall times of the devices as a function of increasing laser intensities was thoroughly examined and analyzed with a well established theoretical model [A. Rose, Phys. Rev. 97, 322 (1955)]. Our results indicate the possibility of achieving stable MoS₂ based detectors with high photoresponsivities (R) ~10²0.28em0exA/W and shot noise limited detectivities (D) ~10¹¹ Jones, under ambient conditions and beyond room temperatures.