A Bridge‐Level IGBT Junction Temperature Monitoring Method Based on Collector–Emitter Voltage Rise Time

Junction temperature monitoring for insulated gate bipolar transistors (IGBTs) is essential for ensuring the long‐term reliable operation of power electronic converters. However, existing temperature‐sensitive electrical parameter (TSEP) methods often suffer from drawbacks such as poor linearity and susceptibility to bond wire aging. Moreover, their device‐level architecture leads to high implementation costs in multiple bridge arm systems. This paper proposes a bridge‐level junction temperature monitoring method based on the collector–emitter voltage rise time t rv during the IGBT turn‐off transient. This method utilizes the complementary driving characteristics of the two IGBTs in a half‐bridge module to extract the rise time t rv‐B and fall time t fv‐B from the collector voltage waveform V CE‐B of the bottom IGBT, enabling junction temperature monitoring of both IGBTs from a single monitoring point. Validated through double‐pulse tests and three‐phase converter experiments, this method exhibits good linearity, high temperature sensitivity, and immunity to bond wire aging, among other advantages, demonstrating high monitoring accuracy. It significantly reduces the complexity and cost of monitoring in multiple bridge arm systems, providing an effective engineering solution for the real‐time thermal management and reliability improvement of power electronic converters.