Promoted Current Injection in GaInN/GaN Multi‐Quantum Nanowire‐Based LEDs Coated With AZO Using Atomic Layer Deposition

GaInN/GaN multi‐quantum shell (MQS) nanowires (NWs) are promising candidates for high‐efficiency microscale and nanoscale light‐emitting diodes (LEDs), offering reduced efficiency losses from the quantum‐confined Stark effect and nonradiative recombination. However, the three‐dimensional NW geometry complicates electrode deposition, leading to nonuniform current injection and emission variations. Here, we demonstrated enhanced current injection in NW‐LEDs using a conformal aluminum‐doped zinc oxide (AZO) film deposited via atomic layer deposition (ALD). Finite element simulations revealed that extended p‐type electrode coverage can promote both axial and lateral current injection from the sidewalls, enhancing radiative recombination across the (0001), (101), and (100) planes. We systematically compared device fabrication processes, transparent electrode morphologies, and optoelectronic performance using AZO and indium tin oxide (ITO) electrodes deposited via ALD and sputtering. Cross‐sectional morphology characterization confirmed minimal thickness variation of ALD‐deposited AZO, enabling uniform sidewall coverage and deposition in the regions between NWs, which is challenging for sputtered ITO. Uniform AZO deposition by ALD improved light output by a factor of 1.2 at an injection current of 30 mA. These results demonstrate that conformal AZO enables uniform transparent electrodes, promotes efficient current injection throughout the NWs, and represents a promising alternative to ITO in NW‐LEDs.