A Liquid Ruthenium Precursor for Atomic Layer Deposition of Low-Resistivity Ruthenium Films

High Resolution Image Download MS PowerPoint Slide The application of a liquid and volatile Ru precursor ([η 5 -C 5 H 5 Ru(CO) 2 (CH 2 ) 3 N(CH 3 ) 2 ] or dicarbonyl(η 5 -cyclopentadienyl)(3-(dimethylamino)propyl)ruthenium, trade name HeRu31) in an atomic layer deposition (ALD) process yielded high-purity and conductive Ru metal thin films. The films were deposited at temperatures from 200–300 °C on Si substrates, exhibiting self-limiting, linear growth behavior with a growth per cycle (GPC) of 1.1 Å at a deposition temperature ( T dep ) of 280 °C. Comprehensive characterization of Ru thin films validates the growth of closed, nanocrystalline Ru films with resistivities in the range of 24–29 μΩ cm. These unprecedented findings offer further insights into the impact of the Ru precursor, paving the way to explore Ru films for microelectronic applications.