Filament Confinement Engineered Heterostructure Memristors for Reliable Artificial Synaptic Applications and Neuromorphic Computing

Gallium oxide (Ga 2 O 3 ) has attracted extensive research for memristor applications due to its excellent properties, including a wide bandgap energy, oxygen-sensitive properties, and outstanding optoelectronic performance. However, existing devices typically suffer from high switching voltages and insufficient stability. Herein, high-stability memristors with resistive switching behavior are demonstrated, based on the a-TiO 2 /a-Ga 2 O 3 heterostructure. Compared to monolayer devices, the heterostructured memristors demonstrate remarkable robust performance, achieving a switching ratio of over 1 order of magnitude, excellent data retention (>10 4 s), high endurance exceeding 500 switching cycles, and reliable long-term potentiation/depression (LTP/LTD) characteristics. This high-stability originates from its capacity to guide migration pathways and facilitates the ordered aggregation of oxygen vacancies, which facilitate enabling the formation of robust conductive filaments within the a-TiO 2 /a-Ga 2 O 3 heterostructures. The findings not only offer an effective optimization strategy for regulating the performance of Ga 2 O 3 -based memristors but also establish the development of high-efficiency artificial neural network computing systems.