High‐Temperature Persistent Luminescence and Anti‐Thermal Quenching in LiGa ₅ O ₈ by Trap Engineering

High‐temperature luminescent materials are essential for applications in displays, information storage, anti‐counterfeiting, and extreme‐environment imaging, yet it remains highly challenging to simultaneously realize anti‐ thermal quenching photoluminescence (anti‐TQ PL) and high‐temperature persistent luminescence (HT‐PersL) under elevated temperatures. In this work, we demonstrate a defect‐engineering strategy based on synergistic Cu 2+ and Zn 2+ co‐doping in LiGa 5 O 8 , which reconstructs the deep trap hierarchy. The resulting thermally robust deep trap network enables efficient charge‐carrier storage and thermally activated release of carriers at high temperatures. Consequently, LiGa 5 O 8 :Cu 2+ , Zn 2+ exhibits both significant anti‐TQ PL and enhanced HT‐PersL, displaying a temperature‐dependent chromaticity evolution from blue to red. This study provides an effective strategy for synergistically controlling multicolor anti‐TQ PL and HT‐PersL in a single material system.