Efficient Hot Carrier Management in Lead Halide Perovskite Micro‐Disks Revealed by Super‐Diffusive Migration

Metal halide perovskites exhibit exceptional optoelectronic properties arising from their defect tolerance, high absorption coefficient, tunable bandgap, and long‐range charge transport. The soft crystal structure and interaction with light lead to a number of interesting observations over the years. Here, we investigate carrier migration in anti‐solvent‐assisted grown methylammonium lead bromide (MAPbBr 3 ) micro‐disks (MDs) using spatially resolved photoluminescence (PL) lifetime microscopy. Confocal excitation reveals rapid outward carrier migration accompanied by pronounced non‐linear PL spatial broadening, indicative of super‐diffusive carrier migration. Under deep conduction band excitation at 375 nm, carriers exhibit accelerated diffusion over hundreds of nanometers on an ultra‐stable nanosecond timescale, with diffusivity increasing from initial average values of ∼0.44 cm 2 /s to equilibrium values exceeding 0.88 cm 2 /s. The degree of non‐linearity, represented by an average non‐linearity coefficient of 1.5, signifies strong deviation from classical diffusion. Comparative measurements with 485 nm excitation, temperature‐dependent studies, and analysis of diffusivity gain and non‐linearity demonstrate that these dynamics originate from stabilized hot carriers interacting with low‐energy LO phonon modes through large‐polaron formation. The observation of nanosecond‐scale super‐diffusion in perovskite microstructures highlights efficient hot‐carrier transport, with implications for designing high‐performance optoelectronic and hot‐carrier energy‐harvesting devices.