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Demonstrates low-voltage switching in organic memristors, indicating enhanced stability and efficiency.
Organic memristors are attractive building blocks for neuromorphic computing owing to their intrinsic synaptic functionalities and solution-processability. However, their operational instability remains a major challenge, primarily arising from poorly controlled semiconductor crystallization and stochastic conductive filament formation. Here, we report a high-performance solution-processed organic memristor based on a TIPS-pentacene/PMMA/CdSe-ZnS quantum-dot hybrid system, in which a dual-engineering strategy is employed to simultaneously regulate film crystallization and filament dynamics. Specifically, the PMMA matrix templates the molecular ordering of TIPS-pentacene to improve film uniformity and crystallinity, while CdSe/ZnS quantum dots locally modulate the electric field to direct and confine conductive filament formation. As a result, the device exhibits ultralow and highly uniform switching voltages (0.473 V for set and −0.430 V for reset), suppressed device-to-device variation, long retention exceeding 104 s, and endurance over 1200 switching cycles. In addition, the memristor supports multilevel data storage and successfully emulates key synaptic functions, including long-term potentiation/depression, paired-pulse facilitation, and spike-timing-dependent plasticity. This work provides a materials-level strategy for achieving reliable and low-power organic memristors, offering a viable route toward high-density nonvolatile memory and neuromorphic computing hardware.
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Lei et al. (2026) studied this question.
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