Nonlocal hygro–photo–thermoelastic analysis of semiconductor nanocylinders with memory effects

This study presents a unified and generalized hygro–photo–thermoelastic model to simulate coupled heat, moisture, and photoexcitation effects in a semiconducting nanocylinder. The approach is based on the Moore–Gibson–Thompson–Hygro–Photo–Thermal (MGTHPT) theory of hygrothermoelasticity, which incorporates non-Fourier heat conduction and generalized moisture diffusion effects. The formulation integrates heat and moisture fluxes with memory‑dependent derivatives (MDD) and a reduced nonlocal Klein–Gordon (KG) operator to capture nanoscale interactions. The governing equations are solved in the Laplace domain using operational methods, and numerical inversion techniques are employed to obtain displacement, hygrothermal stresses, and carrier density fields. Parametric simulations, performed for silicon nanocylinders, illustrate the influence of memory effects, nonlocality reinterpretation, and dual-phase lag parameters on thermal, moisture, mechanical, and electronic responses. The proposed model recovers classical thermoelasticity and generalized theories as limiting cases, ensuring mathematical consistency and physical reliability. Results demonstrate that the framework provides improved realism and predictive capability for semiconductor behavior under coupled hygrothermal and optical environments, offering broader applicability in nanoscale device design and reliability assessment.