Gate‐Programmable Linearization of Atomically Thin Nanoelectromechanical Resonators via Duffing Nonlinearity Cancellation

Atomically thin nanoelectromechanical systems provide strong electrical tunability and high sensitivity, but their practical operating range is often limited by Duffing nonlinearity, which causes resonance peak bending, hysteresis, and reduced readout stability at elevated drive levels. Here, gate‐controlled cancellation of Duffing nonlinearity is demonstrated in suspended MoS 2 drumhead resonators using fully electrical RF down‐mixing readout. By tuning the DC gate bias, the nonlinear response is continuously switched from hardening to softening, with a device‐dependent crossover bias at which the effective Duffing coefficient approaches zero. Near this condition, the resonators maintain an almost linear response even under strong drive, showing strongly suppressed peak shift, negligible hysteresis, and a nearly fourfold improvement in signal‐to‐noise ratio. A continuum model reveals that the cancellation originates from the balance between geometric hardening of the stretched membrane and gate‐induced capacitive softening, and further explains the observed size‐dependent crossover voltage. These results establish electrical nonlinearity cancellation as a practical strategy for expanding the linear operating regime of atomically thin NEMS, offering a useful route toward stable sensing and radio‐frequency signal processing with highly tunable 2D resonators.