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Probes transient processes in GaNxAs1−x using pulsed laser microscopy, indicating notable ultrafast dynamics.
Time-resolved tunneling current measurement in the subpicosecond range was realized by ultrashort-pulse laser combined scanning tunneling microscopy, using the shaken-pulse-pair method. A low-temperature-grown GaNxAs1−x(x=0.36%) sample exhibited two ultrafast transient processes in the time-resolved tunnel current signal, whose lifetimes were determined to be 0.653±0.025 and 55.1±5.0ps. These values are of the same order of magnitude as those measured in the conventional pump–probe reflectivity measurement.
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Takeuchi et al. (2004) studied this question.
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