New approach to quantitative surface photovoltage spectroscopy analysis

A new approach is presented for determining surface state parameters at semiconductor interfaces using time resolved surface photovoltage spectroscopy. The analysis provides precise determination of surface state energies, densities, occupancies, and cross sections for electrons and photons (including the wave-length dependence of the photonic cross sections). Unlike previous methods, this approach does not require prior knowledge of the absolute band bending, but rather determines it among the other parameters. The algorithm is extended for any number of discrete surface energy levels.