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It is demonstrated that a ZnRh2O4 normal spinel with a band gap of ∼2.1 eV is a unique material as a p type wide-gap semiconductor. The electrical conductivity of the sputtered film was 0.7 S cm−1 at 300 K with no intentional doping. The electronic structure was investigated by photoemission and inverse photoemission measurements and indicated that the band gap is composed mainly of ligand field splitting of an octahedrally coordinated Rh3+ octahedron between fully occupied t2g6 and empty eg0 sets.
Mizoguchi et al. (Mon,) studied this question.