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We report a simple fabrication method for metal-semiconductor-metal (MSM) photodetectors using solution-synthesized MoS 2 films as the semiconductor channel and pure indium for the metal contacts. Resonance Raman spectroscopy has been used to confirm the growth of ultra-thin MoS 2 films. Due to the low work function of indium, the back-to-back indium-MoS 2 Schottky junctions formed relatively low Schottky barrier height (0.43 eV), which has been calculated using the thermionic field emission model. Moreover, the MSM device shows good responsivity (22 mA/W) under white light illumination. The MoS 2 -MSM device possesses higher photoelectrical response in the visible and near IR region compared to UV due to the indirect bandgap of ultra-thin MoS 2 film which has been estimated to be 1.38 eV. These findings reveal the significance of using low work function metals like indium as contacts for layered transition metal dichalcogenides (TMDC) films (produced by low cost solution-based techniques), particularly MoS 2 , in order to design semiconductor devices with efficient opto-electronic performance.
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Abbas et al. (2022) studied this question.
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