Cu-doped ZnO nanowires exhibiting high sensitivity to both UV and visible light are prepared by a vapor–liquid–solid method. The nanowires are highly resistive in the dark but exhibit several orders of magnitude enhancement in photoconductivity under UV and white-light irradiation because of an avalanche-type photocarrier multiplication effect, paving the way for their use in nanoscale photodetection applications.
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N. Kouklin (2008) studied this question.
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