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The shear horizontal surface acoustic wave (SH-SAW) resonators with excellent quality factor and temperature stability were fabricated on 42°YX-LiTaO3/SiO2/sapphire substrate. For comparison, the 4-inch LiTaO3/SiO2/sapphire (fully insulating LiTaO3-on-insulator, FI-LTOI) and LiTaO3/SiO2/poly-Si/Si (trap-rich layer assisted LiTaO3-on-insulator, TR-LTOI) substrates are prepared by ion-cutting process. The GHz acoustic delay lines (ADLs) built on FI-LTOI exhibit a propagation loss of only 2. 95 dB/mm, which is 37. 5% smaller than the 4. 72 dB/mm of the ADLs on TR-LTOI. The demonstrated SH-SAW resonators on FI-LTOI exhibit higher Q -values than those on TR-LTOI. Among them, a FI-LTOI based resonator with the resonant frequency of 1. 76 GHz exhibits a maximum Bode- Q (Q {₌₀ₗ}) of 4, 421, an effective electromechanical coupling coefficient of 13. 34%, an excellent figure of merit of 589. 8, and a well-compensated temperature coefficient of frequency of −9. 1 ppm/°C. More importantly, the Q {₌₀ₗ} of the FI-LTOI based resonator is maintained well (2, 791) even at 200 °C whereas that of the TR-LTOI based resonator decreased to 674. Overall, the FI-LTOI substrate may serve as an advanced material platform of SAW devices for 5G-FR1 bands.
Wu et al. (Fri,) studied this question.
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