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July 20, 2026Nano LettersOpen Access

Strongly Bound Charge-Transfer Interface Excitons in Lateral Monolayer MoSe 2 –WSe 2 Heterostructures

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Authors

VSVishal SuriIndian Institute of Technology JammuSSSakal SinglaIndian Institute of Technology JammuSCSuman Kumar ChakrabortyIndian Institute of Technology Kharagpur

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Implication

Randomized trial probes dipolar charge-transfer excitons in MoSe2 – WSe2 heterostructures, suggesting new insights.

Key Points

  • This research aims to investigate the properties of dipolar charge-transfer excitons in MoSe2 – WSe2 heterostructures.
  • Utilized low-temperature photoluminescence spectroscopy to analyze spectral signals at sharp junctions.
  • Employed parameter-free ab initio many-body perturbation theory to assess exciton stability.
  • Examined MoSe2 – WSe2 heterostructures with varied interface widths and band offsets.
  • Identified an additional spectral signal at sharp junctions associated with dipolar charge-transfer excitons.
  • Confirmed the presence of strongly bound dipolar charge-transfer excitons with small lateral band offsets via theoretical analysis.
  • Reinforced link between photoluminescence signals and dipolar charge-transfer excitons at the interfaces.

Cite This Study

Suri et al. (2026) studied this question.

synapsesocial.com/papers/6a5dba128bd453d3397ab48dhttps://doi.org/10.1021/acs.nanolett.5c06500
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