We have developed a novel monolithic fabrication method for polycrystalline silicon (poly-Si) field emitters and a poly-Si thin film transistor (TFT). Poly-Si field emitters were fabricated using a mold transfer process, which allows a TFT to be fabricated under the field emitters and saves space for emitter fabrication. We have also demonstrated successful control of the field emission using the monolithically fabricated TFT.
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Hashiguchi et al. (1996) studied this question.
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