Conductivity control of Sn-doped α-Ga₂O₃ thin films grown on sapphire substrates

We achieved the successful fabrication of Sn-doped α-Ga 2 O 3 thin films with higher electron mobility and wider conductivity controls by improving the crystal quality. α-Ga 2 O 3 films showed n-type conductivity with a maximum electron mobility of 24 cm 2 V −1 s −1 . The carrier concentration was successfully controlled in the range of 10 17 –10 19 cm −3 . Crystal defects such as dislocations severely compensate the free carriers in α-Ga 2 O 3 films and restrict the mobility at low carrier concentrations. Therefore, to achieve further conductivity control and higher mobility, improving the crystallinity of α-Ga 2 O 3 films is necessary.