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The aim is to improve the direct intensity modulation capabilities of terahertz oscillators using resonant-tunneling-diodes.

January 1, 2015IEICE Electronics ExpressOpen Access

Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to ∼30 GHz

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The aim is to improve the direct intensity modulation capabilities of terahertz oscillators using resonant-tunneling-diodes.
Proposed a resonant-tunneling-diode terahertz oscillator structure for high-frequency direct modulation.
Fabricated a slot antenna to facilitate modulation while minimizing capacitance of the metal-insulator-metal layer.
Achieved a cut-off frequency of 30 GHz for direct modulation with reduced MIM capacitance (0.7 pF).
Achieved a direct modulation cut-off frequency of 30 GHz.
Maintained THz output power while reducing MIM capacitance.
The device oscillates at 350 GHz with the improved structure.

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Randomized trial investigates direct modulation frequency in terahertz oscillators, suggesting enhancements for wireless communication.

Ikeda et al. (2015) studied this question.

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