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Abstract The realization of optimal performance in polyvinylidene fluoride (PVDF)‐based triboelectric nanogenerators (TENGs) is fundamentally linked to the enhancement of the β ‐phase content of PVDF ( β ‐PVDF), which is crucial for improving dielectric properties and surface charge density. Among various strategies, the incorporation of semiconducting perovskite nanofillers has been particularly effective in achieving the desired β ‐PVDF phase for TENG applications. Herein, PVDF dielectric films are embedded with polymorphic formamidinium lead triiodide (FAPbI 3 ) perovskite nanofillers and fabricated using a cost‐effective 3D direct‐ink writing setup. The phase transformation of FAPbI 3 nanofillers within the PVDF matrix, in response to varying annealing temperatures, resulted in the formation of PVDF‐FAPbI 3 ( δ ) and PVDF‐FAPbI 3 ( α ) composite films, each exhibiting distinct morphology and dielectric characteristics. The incorporation of δ ‐FAPbI 3 nanofillers rendered the composite film porous and increased the β ‐PVDF content from ≈45% to ≈83%. By converting the δ ‐FAPbI 3 into the α ‐FAPbI 3 through post‐annealing, the composite film transitioned into a mesoporous structure with enhanced tribo‐positive properties. This modification substantially improved the output performance of the TENG, achieving a peak‐to‐peak voltage ( V p‐p ) of 392 Vand a power density of 2587 µW cm − 2 . This work highlights the significant impact of perovskite polymorphism on the performance of TENG devices.
Karimy et al. (Wed,) studied this question.