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Tin oxide (SnO 2 ) is a commonly used electron‐transporting material (ETM) in perovskite solar cells (PSCs) due to its low‐temperature processability and suitable energy levels. However, its inherent limitations, such as insufficient electron mobility and high density of trap states, hinder further improvement of device performance. This review explores recent advances in modifying SnO 2 ETMs to address these limitations and improve the efficiency and stability of n‐i‐p PSCs. We delve into the role of various dopants and surface modification strategies in enhancing electron transport properties and reducing the trap states. By elucidating the impacts of dopant chemical/electronic structures and surface treatments on SnO 2 properties, this review provides valuable insights for the development of efficient ETMs for high‐performance PSCs.
Tang et al. (Mon,) studied this question.